SiC - Solutions for Silicon Carbide Wafer Processing

Engis has developed full process solutions consisting of three steps:

• Grinding
• Lapping (1 or 2 steps)
• Polish and Chemical-Mechanical Polishing (CMP)

Silicon Carbide Wafer Grinding

The HVG-250/300 series Vertical Grinding Machine combined with Engis MAD Grinding Wheels can achieve a superior surface finish on silicon carbide wafers to reduce or even eliminate loose abrasive lapping steps. The machine can be customized to your needs:

• Auto dressing
• In process thickness measurement
• Data logging and advanced controls

Silicon Carbide Wafer Lapping

Silicon carbide wafer lapping can minimize the burden on the final CMP step by creating a low Ra surface finish while maintaining superior flatness. This can be achieved in one or two steps, using successively softer lap plates and finer diamond slurry. The EJW-910 series is 6” SiC wafer   compatible, with batch processing for efficiency.

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Silicon Carbide Wafer Chemical Mechanical Polishing (CMP)

Engis has developed a slurry and pad combination specifically designed for the needs of Epi-Ready Silicon Carbide CMP, achieving a damage free, low roughness surface finish in a single, high-throughput step.

• CMP slurry: HYPREZ PA2004
• CMP pad: Engis 530N005MH

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