SiC - Solutions for Silicon Carbide Wafer Processing


Engis has developed full process solutions consisting of three steps:

  • Grinding
  • Lapping (1 or 2 steps)
  • Polish and Chemical-Mechanical Polishing (CMP)

Silicon Carbide Wafer Grinding

The HVG-250/300 series Vertical Grinding Machine combined with Engis MAD Grinding Wheels can achieve a superior surface finish on silicon carbide wafers to reduce or even eliminate loose abrasive lapping steps. The machine can be customized to your needs:

  • Auto dressing
  • In process thickness measurement
  • Data logging and advanced controls


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Silicon Carbide Wafer Lapping

Silicon carbide wafer lapping can minimize the burden on the final CMP step by creating a low Ra surface finish while maintaining superior flatness. This can be achieved in one or two steps, using successively softer lap plates and finer diamond slurry. The EJW-910 series is 6” SiC wafer   compatible, with batch processing for efficiency.



   DMP1.            DMP2


Silicon Carbide Wafer Chemical Mechanical Polishing (CMP)

Engis has developed a slurry and pad combination specifically designed for the needs of Epi-Ready Silicon Carbide CMP, achieving a damage free, low roughness surface finish in a single, high-throughput step.

  • CMP slurry: HYPREZ PA2004
  • CMP pad: Engis 530N005MH

EJW-910I-CMP                      CMP

 ICSCRM 2019 - SiC epi-ready finish