SiC - Solutions for Silicon Carbide Wafer Processing
Engis has developed full process solutions consisting of three steps:
- Lapping (1 or 2 steps)
- Polish and Chemical-Mechanical Polishing (CMP)
Silicon Carbide Wafer Grinding
The HVG-250/300 series Vertical Grinding Machine combined with Engis MAD Grinding Wheels can achieve a superior surface finish on silicon carbide wafers to reduce or even eliminate loose abrasive lapping steps. The machine can be customized to your needs:
- Auto dressing
- In process thickness measurement
- Data logging and advanced controls
Silicon Carbide Wafer Lapping
Silicon carbide wafer lapping can minimize the burden on the final CMP step by creating a low Ra surface finish while maintaining superior flatness. This can be achieved in one or two steps, using successively softer lap plates and finer diamond slurry. The EJW-910 series is 6” SiC wafer compatible, with batch processing for efficiency.
Silicon Carbide Wafer Chemical Mechanical Polishing (CMP)
Engis has developed a slurry and pad combination specifically designed for the needs of Epi-Ready Silicon Carbide CMP, achieving a damage free, low roughness surface finish in a single, high-throughput step.
- CMP slurry: HYPREZ PA2004
- CMP pad: Engis 530N005MH