Cut Costs, Not Corners with the EAG and HVG Series of Grinders from Engis
Leveraging decades of engineering expertise, Engis Corporation delivers nano-scale precision with industry-leading impact. Our vertical and horizontal grinders achieve surface roughness (Ra) under 1nm and total thickness variation (TTV) below 3μm at scale. Offering exceptional value, we provide the most cost-effective solutions in the marketplace.
Engineered to help manufacturers grind silicon carbide faster and more efficiently, the EAG SiC Grinder utilizes vitrified grinding wheels with high material removal rates and self-sharpening capabilities. This enables aggressive grinding while minimizing the need for wheel changes, delivering exceptional performance and cost savings.
This series of Engis Grinders is ideal for companies processing SiC substrates or reclaim wafers. The grinding wheels are specifically formulated to the material properties of silicon carbide, providing maximum cutting forces and minimal wear. That means faster cycle times, lower wheel consumption, and consistent high-quality grinding batch after batch.
Take your SiC grinding operations to the next level with the SiC Grinder from Engis. You’ll cut costs, not corners!
See Full Details on our EAG Single-Single and Dual-Spindle Systems |
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| EAG Single-Spindle Systems | EAG Dual-Spindle Systems |
Unparalleled SiC Wafer Throughput Using Hy-Grind Wheels
The highly controlled grain spacing of the Engis Hy-Grind wheel required for hi-efficiency grinding while maintaining its strength has been realized by bonding Engis characterized diamonds with specialized vitrified bonds at an appropriate ratio.
The key to effective grinding is achieving the optimal balance between diamond grain density and bond type. Researchers have found success bonding diamond particles with specifically engineered vitrified glass-ceramic bonds. The vitrified material firmly anchors the diamond grains while providing a rigid structure. This composite achieves the coveted grain spacing for efficient material removal. With the optimized diamond-to-bond ratio, these wheels can now grind hard, brittle substances successfully.
One such challenging material is single crystal silicon carbide (SiC). This extremely hard substance rapidly degrades grinding wheels, limiting process efficiency. The precisiely spaced diamond grains in the vitrified wheels can continuously grind SiC wafers without immediately dulling. This breakthrough in diamond wheel engineering enables cost-effective, high-throughput grinding and provides just enough cutting ability without wheel degradation, facilitating reliable SiC wafer production.
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